FDS8880
Manufacturer:
On Semiconductor
Mfr.Part #:
FDS8880
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT N-Channel number of channels:1 2.5 W 30 V Continuous Drain Current (ID):11.6 A 30 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 30 V |
| Length | 5 mm |
| Width | 4 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 10 MΩ |
| Height | 1.5 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 11.6 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 2.5 W |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 2.5 V |
| Number of Channels | 1 |
| Input capacitance | 1.235 nF |
| Continuous Drain Current (ID) | 11.6 A |
| Rds On Max | 10 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Turn-On Delay Time | 7 ns |
| Turn-Off Delay Time | 38 ns |
| Element Configuration | Single |
| Fall Time | 15 ns |
| Rise Time | 27 ns |
| Dual Supply Voltage | 30 V |
| Gate Charge | 30 nC |
| Drain to Source Resistance | 10 mΩ |
| Nominal Vgs | 2.5 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 1.2 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 128
Distributors
pcbx
pcbxUnit Price$0.53875
Ext.Price$0.53875
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.53875 | $0.53875 |
| 10 | $0.42826 | $4.28260 |
| 25 | $0.39030 | $9.75750 |
| 50 | $0.35570 | $17.78500 |
| 100 | $0.32417 | $32.41700 |
| 300 | $0.31090 | $93.27000 |
| 500 | $0.29818 | $149.09000 |
| 1000 | $0.28140 | $281.40000 |